NCKUEE Faculty Data
Chinese Version
Professor Jone F. Chen
Address
EE Building 12F R92C93
Email
TEL
+886-6-2757575 ext.62395
Lab
DCL Lab
(R92C23/ext.62400-1223)
Background
Educations
1998
Ph.D., University of California at Berkeley, U.S.A.
1995
M.S., University of California at Berkeley, U.S.A.
1990
B.S., National Cheng Kung University, R.O.C.
Experiences
2008~now
Professor, Department of Electrical Engineering, National Cheng Kung University, R.O.C.
2011-2014
Director, Institute of Microelectronics, National Cheng Kung University, R.O.C.
2003-2008
Associate Professor, Department of Electrical Engineering, National Cheng Kung University, R.O.C.
1999-2003
Assistant Professor Department of Electrical Engineering National Cheng Kung University, R.O.C.
1999-1999
Principal Engineer, Taiwan Semiconductor Manufacturing Company (TSMC), R.O.C.
Specialities
  • Semiconductor Devices
  • Semiconductor Physics
  • Device Reliability
Publication
Journal
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  1. J. F. Chen, D. H. Yang, C. Y. Lin, and S. Y. Wu, "The impact of mobility degradation and supply voltage on negative bias temperature instability in advanced p-channel metal-oxide-semiconductor field-effect transistors,"Japanese J. Applied Physics, vol. 46, no. 4B, pp. 2011-2014, Apr. 2007.
  2. J. F. Chen, K. M. Wu, J. R. Lee, Y. K. Su, H. C. Wang, Y. C. Lin, and S. L. Hsu, "Characteristics and improvement of hot-carrier reliability in sub-micrometer high-voltage double diffused drain metal-oxide-semiconductor field-effect transistors," Japanese J. Applied Physics, vol. 46, no. 4B, pp. 2019-2022, Apr. 2007.
  3. C. Y. Hu, S. C. Chen, J. F. Chen, S. J. Chang, M. H. Wang, V. Yeh, and J. C. Chen, "Ultra-thin DPN SiON gate dielectrics prepared with various RF powers," J. Vacuum Science and Technology B, vol. 25, no. 4, pp. 1298-1304, Jul./Aug. 2007.
  4. J. F. Chen, J. R. Lee, K. M. Wu, T. Y. Huang, C. M. Liu, and S. L. Hsu, "Off-state avalanche breakdown induced on-resistance degradation in lateral DMOS transistors," IEEE Electron Device Letters, vol. 28, no. 11, pp. 1033-1035, Nov. 2007.
  5. J. R. Lee, J. F. Chen, K. M. Wu, C. M. Liu, and S. L. Hsu, "Effect of hot-carrier-induced interface states distribution on linear drain current degradation in 0.35 um n-type lateral diffused metal-oxide-semiconductor transistors," Applied Physics Letters, vol. 92, p. 103510, Mar. 2008.
  6. J. F. Chen, S. Y. Chen, J. R. Lee, K. M. Wu, T. Y. Huang, and C. M. Liu, "Anomalous increase in hot-carrier-induced threshold voltage shift in n-type drain extended metal-oxide-semiconductor transistors," Applied Physics Letters, vol. 92, p. 113509, Mar. 2008.
  7. J. P. Wang, Y. K. Su, and J. F. Chen, "Effects of surface cleaning on stressvoiding and electromigration of Cu damascene interconnection," IEEE Trans. on Device and Materials Reliability, vol. 8, no. 1, pp. 210-215, Mar. 2008.
  8. K. S. Tian, J. F. Chen, S. Y. Chen, K. M. Wu, J. R. Lee, T. Y. Huang, C. M. Liu, and S. L. Hsu, "An investigation on hot-carrier reliability and degradation index in lateral diffused metal-oxide-semiconductor field-effect transistors," Japanese J. Applied Physics, vol. 47, no. 4, pp. 2641-2644, Apr. 2008.
  9. S. Y. Chen, J. F. Chen, K. M. Wu, J. R. Lee, C. M. Liu, and S. L. Hsu, "Effect of gate voltage on hot-carrier-induced on-resistance degradation in high-voltage n-type lateral diffused metal-oxide-semiconductor transistors," Japanese J. Applied Physics, vol. 47, no. 4, pp. 2645-2649, Apr. 2008.
  10. S. Y. Chen, J. F. Chen, J. R. Lee, K. M. Wu, C. M. Liu, and S. L. Hsu, "Anomalous hot-carrier-induced increase in saturation-region drain current in n-type lateral diffused metal-oxide-semiconductor transistors,"IEEE Trans. on Electron Devices, vol. 55, no. 5, pp. 1137-1142, May 2008.
  11. J. F. Chen, K. S. Tian, S. Y. Chen, J. R. Lee, K. M. Wu, and C. M. Liu, "Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors," Applied Physics Letters, vol. 92, p. 243501, Jun. 2008.
  12. J. F. Chen, J. R. Lee, K. M. Wu, T. Y. Huang, and C. M. Liu, "Effect of drift-region concentration on hot-carrier-induced Ron degradation in nLDMOS transistors," IEEE Electron Device Letters, vol. 29, no. 7, pp. 771-774, Jul. 2008.
  13. J. F. Chen, K. S. Tian, S. Y. Chen, J. R. Lee, K. M. Wu, T. Y. Huang, and C. M. Liu, "Gate current dependent hot-carrier-induced degradation in LDMOS transistors," Electronics Letters, vol. 44, no. 16, pp. 991-992, Jul. 2008.
  14. J. F. Chen, J. R. Lee, K. M. Wu, T. Y. Huang, and C. M. Liu, "Mechanism and improvement of on-resistance degradation induced by avalanche breakdown in lateral DMOS transistors," IEEE Trans. on Electron Devices,vol. 55, no. 8, pp. 2259-2262, Aug. 2008.
  15. D. H. Yang, J. F. Chen, J. H. Lee, and K. M. Wu, "Dynamic turn-on mechanism of the n-MOSFET under high current stress," IEEE Electron Device Letters, vol. 29, no. 8, pp. 895-897, Aug. 2008.
  16. J. F. Chen, K. S. Tian, S. Y. Chen, K. M. Wu, and C. M. Liu, "On-resistance degradation induced by hot-carrier injection in LDMOS transistors with STI in the drift region," IEEE Electron Device Letters, vol. 29, no. 9, pp. 1071-1073, Sep. 2008.
  17. J. F. Chen, S. Y. Chen, K. M. Wu, and C. M. Liu, "Channel length dependence of hot-carrier-induced degradation in n-type drain extended metal-oxide-semiconductor transistors," Applied Physics Letters, vol. 93, p. 223504, Dec. 2008.
  18. J. F. Chen, S. Y. Chen, K. M. Wu, and C. M. Liu, "Investigation of hot-carrier-induced degradation mechanisms in p-type high-voltage drain extended metal-oxide-semiconductor transistors," Japanese J. Applied Physics, vol. 48, p. 04C039, Apr. 2009.
  19. J. F. Chen, K. S. Tian, S. Y. Chen, K. M. Wu, and C. M. Liu, "Mechanism and modeling of on-resistance degradation in n-type lateral diffused metal-oxide-semiconductor transistors," Japanese J. Applied Physics, vol. 48, p. 04C040, Apr. 2009.
  20. J. F. Chen, K. S. Tian, S. Y. Chen, K. M. Wu, J. R. Shih, and K. Wu, "An investigation on anomalous hot-carrier-induced on-resistance reduction in n-type LDMOS transistors," IEEE Trans. on Device and Materials Reliability, vol. 9, no. 3, pp. 459-464, Sep. 2009.
  21. J. F. Chen, S. Y. Chen, K. M. Wu, J. R. Shih, and K. Wu, "Convergence of hot-carrier-induced saturation-region drain current and on-resistance degradation in drain extended MOS transistors," IEEE Trans. on Electron Devices, vol. 56, no. 11, pp. 2843-2847, Nov. 2009.
  22. J. F. Chen, K. S. Tian, S. Y. Chen, K. M. Wu, J. R. Shih, and K. Wu, "Mechanisms of hot-carrier-Induced threshold voltage shift in high-voltage p-type LDMOS transistors," IEEE Trans. on Electron Devices, vol. 56, no. 12, pp. 3203-3206, Dec. 2009.
  23. C. Y. Hu, J. F. Chen, S. C. Chen, S. J. Chang, C. P. Lee, and T. H. Lee, "Improved poly gate engineering for 65 nm low power CMOS technology," J. of The Electrochemical Society, vol. 157, no. 1, pp. H38-H43, Jan. 2010.
  24. C. Y. Hu, J. F. Chen, S. C. Chen, S. J. Chang, S. M. Wang, C. P. Lee, and K. M. Lee, "Shallow trench isolation stress modification by optimal shallow trench isolation process for sub-65-nm low power complementary," J. Vacuum Science Technology B, vol. 28, no. 2, pp. 391-397, Mar. 2010.
  25. C. Y. Hu, J. F. Chen, S. C. Chen, S. J. Chang, K. M. Lee, and C. P. Lee, "Improvement of poly-pimple-induced device mismatch on 6T-SRAM at 65-nm CMOS technology," IEEE Trans. on Electron Devices, vol. 57, no. 4, pp. 956-959, Apr. 2010.
  26. C. Y. Hu, J. F. Chen, S. C. Chen, S. J. Chang, K. M. Lee, and C. P. Lee, "Ultrathin DPN STI SiON liner for 40 nm low-power CMOS technology," Solid-State Electronics, vol. 54, no. 5, pp. 564-567, May 2010.
  27. D. H. Yang, J. F. Chen, K. M. Wu, J. R. Shih, and J. H. Lee, "The direct evidence of substrate potential propagation in a gate-grounded NMOS," Solid-State Electronics, vol. 54, no. 7, pp. 728-731, Jul. 2010.
  28. J. F. Chen, C. R. Yan, Y. C. Lin, J. J. Fan, S. F. Yang, and W. C. Shih, "Analysis of GIDL-induced off-state breakdown in high-voltage depletion-mode nMOSFETs," IEEE Trans. on Electron Devices, vol. 58, no. 6, pp. 1608-1613, Jun. 2011.
  29. P. C. Huang, S. L. Wu, S. J. Chang, Y. T. Huang, J. F. Chen, C. T. Lin, M. Ma, and O. Cheng, "Characteristics of Si/SiO2 interface properties for CMOS fabricated on hybrid orientation substrate using amorphization/templated recrystallization (ATR) method," IEEE Trans. on Electron Devices, vol. 58, no. 6, pp. 1635-1642, Jun. 2011.
  30. C. R. Yan, J. F. Chen, Y. J. Lee, Y. J. Liao, C. Y. Lin, C. Y. Chen, Y. C. Lin, and H. H. Chen, "Extraction and Analysis of Interface States in 50-nm NAND Flash Devices, " IEEE Trans. on Electron Devices, vol. 60, no. 3, pp. 992-997, Mar. 2013.
  31. C. R. Yan, J. F. Chen, Y. J. Lee, C. Y. Lin, H. T. Hsu, Y. J. Liao, M. T. Yang, C. Y. Chen, Y. C. Lin, and H. H. Chen, "Characteristics of Lateral Duffsed Metal-Oxide-Semiconductor Transistors with Lightly Doped Drain Implantation through Gradual Screen Oxide," Japanese J. Applied Physics, vol. 52, p.04CC07, Apr. 2013
  32. C. R. Yan, J. F. Chen, Y. J. Lee, W. S. Huang, M. J. Huang, C. Y. Chen, Y. C. Lin, K. F. Chang, and H. H. Chen, "Characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation depths," Japanese J. Applied Physics, vol. 52, p. 11NA06, Nov. 2013.
  33. S. C. Tsai, S. L. Wu, J. F. Chen, B. C. Wang, P. C. Huang, K. S. Tsai, T. H. Kao, C. W. Yang, C. G. Chen, K. Y. Lo, O. Cheng, and Y. K. Fang, "Investigation of low-frequency noise characterization of 28-nm high-k pMOSFET with embedded SiGe source/drain," J. Nanomaterials, vol. 2014, p. 787132, Mar. 2014.
  34. S. C. Tsai, S. L. Wu, P. C. Huang, B. C. Wang, K. S. Tsai, T. H. Kao, C. W. Yang, C. G. Chen, O. Cheng, Y. K. Fang, S. J. Chang, and J. F. Chen, "Investigation of trap properties of Hf0.83Zr0.17O2 high-k gate stack p-type MOSFETs by low-frequency (1/f) noise and random telegraph noise analyses," Japanese J. Applied Physics, vol. 53, p. 08LB03, Jul. 2014.
  35. J. F. Chen, T. H. Chen, and D. R. Ai, "Two-stage hot-carrier induced degradation of p-type LDMOS transistors," Electronics Letters, vol. 50, no. 23, pp. 1751-1753, Nov. 2014.
  36. P. C. Huang, J. F. Chen, S. C. Tsai, S. L. Wu, K. S. Tsai, T. H. Kao, Y. K. Fang, C. M. Lai, C. W. Hsu, Y. W. Chen, and O. Cheng, "Impact of uniaxial strain on random telegraph noise in high-k/metal gate pMOSFETs," IEEE Trans. on Electron Devices, vol. 62, no. 3, pp. 988-993, Mar. 2015.
  37. J. F. Chen, C. P. Chang, Y. M. Liu, Y. L Tsai, H. T. Hsu, C. Y. Chen, and H. P. Hwang, "Drift region doping effects on characteristics and reliability of high-voltage n-type metal-oxide-semiconductor transistors," Japanese J. Applied Physics, vol. 55, p. 01AD03, Jan. 2016.
  38. J. F. Chen, T. J. Ai, Y. L. Tsai, H. T. Hsu, C. Y. Chen, and H. P. Hwang, "Analysis of high-voltage metal-oxide-semiconductor transistors with gradual junction in the drift region," Japanese J. Applied Physics, vol. 55, p. 08PD04, Aug. 2016.
Conference
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  1. J. P. Wang, Y. K. Su, and J. F. Chen, "Influence of surface cleaning on stressvoiding and electromigration of Cu damascene interconnection," Proc. 45rd IEEE International Reliability Physics Symposium (IRPS), pp. 646-647, Apr. 2007.
  2. J. F. Chen, S. Y. Chen, K. S. Tian, K. M. Wu, Y. K. Su, C. M. Liu, and S. L. Hsu, "Effects of drift-region design on the reliability of integrated high-voltage LDMOS transistors," Proc. 2007 IEEE International Conf. on IC Design and Technology, pp. 121-124, May 2007.
  3. K. S. Tian, J. F. Chen, W. C. Wang, S. Y. Chen, K. M. Wu, J. R. Lee, C. M. Liu, and S. L. Hsu, "Mechanism and reliability index of hot-carrier degradation in LDMOS transistors," Ext. Abs. 2007 International Conference on Solid State Devices and Materials (SSDM), pp. 452-453, Sep. 2007.
  4. S. Y. Chen, J. F. Chen, K. M. Wu, J. R. Lee, C. M. Liu, and S. L. Hsu, "Anomalous hot-carrier-induced on-resistance degradation in high-voltage LDMOS transistors," Ext. Abs. 2007 International Conference on Solid State Devices and Materials (SSDM), pp. 454-455, Sep. 2007.
  5. J. F. Chen, J. R. Lee, K. M. Wu, and C. M. Liu, "Impact of hot-hole injection on the characteristics of high-voltage MOS transistors," Proc. 13th International Symp. on Electrets, pp. 77, Sep. 2008.
  6. J. F. Chen, J. R. Lee, S. Y. Chen, K. S. Tian, K. M. Wu, and C. M. Liu, "Hot-carrier-induced degradation in p-type high-voltage DEMOS transistors," Ext. Abs. 2008 International Conference on Solid State Devices and Materials (SSDM), pp. 430-431, Sep. 2008.
  7. K. S. Tian, J. F. Chen, S. Y. Chen, J. R. Lee, K. M. Wu, and C. M. Liu, "Effect of hot-carrier-induced hole trapping on n-type LDMOS transistors," Ext. Abs. 2008 International Conference on Solid State Devices and Materials (SSDM), pp. 444-445, Sep. 2008.
  8. J. F. Chen, K. S. Tian, S. Y. Chen, K. M. Wu, and C. M. Liu, "Effect of NDD dosage on hot-carrier reliability in DMOS transistors," Proc. 10th International Symp. on Quality Electronic Design, pp. 226-229, Mar. 2009.
  9. J. F. Chen, K. W. Lin, S. Y. Chen, K. M. Wu, J. R. Shih, and K. Wu, "Anomalous hot-carrier-induced saturation drain current degradation in DEMOS transistors," Ext. Abs. 2009 International Conference on Solid State Devices and Materials (SSDM), pp. 412-413, Oct. 2009.
  10. P. C. Huang, S. L. Wu, S. J. Chang, J. F. Chen, Y. T. Huang, D. G. Hong, C. Y. Chang, C. Y. Wu, C. T. Lin, M. Ma, and O. Cheng, "Evaluation of Si/SiO2 interface properties for CMOS fabricated on hybrid orientation substrate with amorphization/templated recrystallization method," Ext. Abs. 2010 International Conference on Solid State Devices and Materials (SSDM), pp. 189-190, Sep. 2010.
  11. J. F. Chen, C. R. Yan, Y. C. Lin, J. J. Fan, S. F. Yang, and W. C. Shih, "Effect of drift region process on breakdown voltage in high-voltage n-channel MOSFETs," Proc. 27th International Conference on Circuits/Systems, Computer and Communications, Jul. 2012.
  12. C. R. Yan, J. F. Chen, Y. J. Lee, Y. J. Liao, C. Y. Lin, C. Y. Chen, Y. C. Lin, and H. H. Chen, "Charge pumping current characteristics in advanced NAND flash device," Ext. Abs. 2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology, pp. 35-36, Nov. 2013.
  13. Y. S. Fing, Y. M. Liu, and J. F. Chen, "Effects of device dimension on reliability of N-LDMOS transistors," Ext. Abs. 6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials," p. 04pP56, Mar. 2014.
  14. J. F. Chen, Y. M. Liu, Y. H. Chen, H. T. Hsu, C. Y. Chen, and H. P. Hwang, "Dimension effect on characteristics and hot-carrier reliability in high voltage MOSFETs," Ext. Abs. 2015 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology, pp. 31-32, Nov. 2015.
  15. Y. L. Tsai, J. F. Chen, H. T. Hsu, C. Y. Chen, and H. P. Hwang, "Effects of Si recess on device characteristics and hot-carrier reliability in nMOSFETs, " Ext. Abs. 2016 International Electron Devices and Materials Symposium, p. PC-27, Nov. 2016.
  16. C. Y. Chen, J. F. Chen, Y. L. Tsai, H. T. Hsu, and H. P. Hwang, "Effects of Si recess structure on performance and reliability in high voltage n-MOSFETs, " Ext. Abs. 2017 International Conference on Solid State Devices and Materials, pp. 759-760, Sep. 2017.
Patent
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Others
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Projects
  1. Fabrication and analysis of CMOS devices fabricated on substrate with hybrid orientation (I) (2010)
  2. Fabrication and analysis of CMOS devices fabricated on substrate with hybrid orientation (II) (2011)
  3. Breakdown voltage and reliability improvement in n-channel lateral diffused MOS transistors (2012)
  4. Breakdown voltage and reliability improvement in GaN high electronic mobility transistors (I) (2013)
  5. Reliability of high-voltage MOS transistors (2014)
  6. Effects of Si recess on device characteristics and reliability in MOS transistors (2016)
  7. Performance and reliability improvement in high-voltage MOS transistors (2017)
  8. Effects of drift region design on the characteristics and reliability of high-voltage MOS transistors(2018)
Classes
2021 Fall
2021 Spring
Students
Current Academic Year Lab Members
Master
Yun-Chien Tsai
Ko-Chu Pan
Min-Chen Tsai
Chih-Cheng Cheng
Graduates of all Previous Years
Ph.D.
95
Guo-Ming Wu
96
Jia-Rui Lee
97
Shiang-Yu Chen   Kuen-Shiuan Tian
98
Dau-Hung Yang
101
Chin-Rung Yan
103
Shih-Chang Tsai
107
Yen-Lin Tsai
110
Yi-Ting Wu
Master
89
Chiou-Tian Ho
90
Chih-Pin Tsao   Shuo-Hsien Hsu
91
Shin-Duen Huang   Yu-Sen Ou
92
Kuang-Wan Lin   Chi-Chih Chen
93
Hung-Chun Wang
94
Shiang-Yu Chen   Kuen-Shiuan Tian   Jian-Ting Lu
95
Chin-Rung Yen   Wei-Chieh Wang   Wei-Chin Huang
96
Chung-Yang Chen
97
Tai-Cing Wu   Yo-Jhen Guo
98
Jung-Bin Huang   Jian-You Chen   Yu-Di Wang   Ling-Yi She   Liang-Yu Jou
101
Ya-Sheng Feng   Tsung-Han Lu
102
Tzu-Hsiang Chen   Chun-Pao Chuang   Chun-Po Chang
103
Deng-Ren Ai   Yu-Ming Liu
104
Wei-Hong Tsai   Yu-Hong Chen
105
Jyun-Yan Chen   Shang-Feng Shen   Shih-An Cheng
106
Yu-Hsuan Lee   Zong-Han Wu   Chao-Ching Chan
107
Ming-Ju Sun   Chun-Ting Chen   Shih-Hsuan Lin
108
Yi-Ting Chen   Chih-Pang Lu
109
Chao-Hung Wang   Chin-Chin Liao   Po-Hao Ko
Honors
NCKU EE