Ricky W. Chuang, Chung-Chieh Shih, and Cheng-Liang Huang, “The enhanced electrode-dependent resistive random access memory based on BiFeO3,” Applied Physics A: Materials Science & Processing, Volume 129, issue 5, Article number: 329, May 2023.
Ricky Wenkuei Chuang, Yu-Hsin Huang, and Tsung-Han Tsai, “Germanium-Tin (GeSn) Metal-Semiconductor-Metal (MSM) Near-Infrared Photodetectors,” Micromachines, Volume 13(10), pp. 1733, 14 October 2022.
Ricky Wenkuei Chuang, Bo-Liang Liu, and Cheng-Liang Huang, “The Spectral Response of the Dual Microdisk Resonator Based on BaTiO3 Resistive Random Access Memory,” Micromachines, Volume 13(8), pp. 1175, 26 July 2022.
Yu-Chun Huang, Ricky Wenkuei Chuang, Keh-Moh Lin, and Tsung-Chieh Wu, “Study the Passivation Characteristics of Microwave Annealing Applied to APALD Deposited Al2O3 Thin Film,” Coatings, Volume 11(12), pp. 1450, 25 November 2021.
Yu-Chun Huang and Ricky Wenkuei Chuang, “Study on Annealing Process of Aluminum Oxide Passivation Layer for PERC Solar Cells,” Coatings, Volume 11(9), pp. 1052, 2021.
Shyh-Jer Huang, Shen-Po Chang, Ricky W. Chuang, Jian-Ting Lai, Yan-Kuin Su, Chih-Yi Liu, Zi-Hao Wang, Jian-Long Ruan, and Cheng-Chung Lin, “GaN Submicron Rods on Graphene for Nonenzymatic Amperometric Sensing of Glucose,” Nanoscience and Nanotechnology Letters,Volume 9, Number 10, pp. 1487-1490, October 2017.
S. S. Li, Ricky W. Chuang, Y. K. Su, and Y. M. Hu, “Bias voltage-controlled ferromagnetismswitching in undoped zinc oxide thin film memory device,” Applied Physics Letters, Vol. 109(25),pp. 252103, December 2016.
Peng-Yin Su, Ricky Wenkuei Chuang, Chin-Hsiang Chen, and Tsung-Hsien Kao, “Low-frequency noise properties of metal–organic–metal ultraviolet sensors,” Japanese Journal of Applied Physics, Vol. 54, pp. 04DK12, April 2015.
Volume 9, Number 10, pp. 1487-1490, October 2017.
Ricky W. Chuang and Mao-Teng Hsu, “Dense Multi-Channel Optical Waveguide Switch Based on Micro Ring Resonators,” IEEE/OSA Journal of Lightwave Technology, Vol. 32, No. 8, pp. 1570-1577, April 15, 2014.
Ricky W. Chuang, Mao-Teng Hsu, and Guo-Shian Wang, “Long-Period Waveguide Gratings with Amorphous silicon Cladding Layer on Silicon-on-Insulator (SOI) Substrates Realized by Anisotropic Wet Etching,” Japanese Journal of Applied Physics, Vol. 53, pp. 04EG15, 2014.
Zhen-Da Huang, Ricky Wenkuei Chuang, Wen-Yin Weng, Shoou-Jinn Chang, Chiu-JungChiu,and San-Lein Wu, “GaN Schottky Barrier Photodetectors with a β-Ga2O3 Cap Layer,” Applied Physics Express, Vol. 5, pp. 116701 (3 pages), 2012.
Yu-Yao Lin, Ricky W. Chuang, Shoou-Jinn Chang, Shuguang Li, Zhi-Yong Jiao, Tsun-KaiKo, S. J. Hon, and C. H. Liu, “GaN-Based LEDs With a Chirped Multiquantum BarrierStructure,”IEEE Photonics Technology Letters, Vol. 24, No. 18, pp. 1600-1602, September 15, 2012.
Tzung-Han Wu, Ricky Wenkuei Chuang, Chun-Yuan Huang, Chiao-Yang Cheng, Chun-Yen Huang, Yi-Chieh Lin, and Yan-Kuin Su, “ZnO Nanoneedles/ZnO:Al Film Stack as an Anti-Reflection Layer for High Efficiency Triple Junction Solar Cell,” Electrochemical and Solid-State Letters, Vol. 15(6), pp. H208-H210, 2012.
R. W. Chuang, M.-T. Hsu, Y.-C. Chang, Y.-J. Lee, and S.-H. Chou, “Integrated multimode interference coupler-based Mach-Zehnder interferometric modulator fabricated on a silicon-on-insulator substrate,” IET Optoelectronics, Vol. 6, Issue 3, pp. 147-152, 2012.
Ricky W. Chuang, Mao-Teng Hsu, Shen-Horng Chou, and Yao-Jen Lee, “Silicon Mach-Zehnder Waveguide Interferometer on Silicon-on-Silicon (SOS) Substrate Incorporating the Integrated Three-Terminal Field-Effect Device as an Optical Signal Modulation Structure,”IEICE Transactions on Electronics, Vol. E94-C, No. 7, pp. 1173-1178, July 1, 2011.
R. W. Chuang and Zhen-Liang Liao, “Integrated SiO2/SiON/SiO2 Thermo-Optical Switch Based on the Multimode Interference Effect,” Japanese Journal of Applied Physics, Vol. 49, Issue 4, pp. 04DG21-1 – 04DG21-5, April 2010.
R. W. Chuang and Zhen-Liang Liao, “2 x 2 Thermo-Optic Silicon Oxynitride Optical Switch on the Integrated Multimode Interference Waveguides,” Journal of the Electrochemical Society, Vol. 157(2), pp. H149-H152, 2010.
W. Y. Weng, R. W. Chuang, S. J. Chang, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng, and S. L. Wu, “GaN MSM Photodetectors with a Semi-Insulating AlInN Cap Layer and Sputtered ITO Transparent Electrodes,” Electrochemical and Solid-State Letters, Vol. 12, Issue 10, pp. H369-H372, 2009.
S. P. Chang, R. W. Chuang, S. J. Chang, C. Y. Lu, Y. Z. Chiou, and S. F. Hsieh, “SurfaceHCl treatment in ZnO photoconductive sensors,” Thin Solid Films, Vol. 517, Issue 17, pp. 5050-5053, July 1, 2009.
S. P. Chang, R. W. Chuang, S. J. Chang, Y. Z. Chiou, and C. Y. Lu, “MBE n-ZnO/MOCVD p-GaN heterojunction light-emitting diode,” Thin Solid Films, Vol. 517, Issue 17, pp. 5054-5056, July 1, 2009.
R. W. Chuang, M. T. Hsu, Z. L. Liao, and C. C. Cheng, “Silicon Integrated Waveguide Modulator Based on a Three-Terminal Device Structure,” Japanese Journal of Applied Physics, Vol. 48, No. 4, pp. 04C117-1 – 04C117-5, April 2009.
Zhen-Liang Liao and Ricky W. Chuang, “1x3 Silicon Oxynitride Tunable Optical Waveguide Attenuators Based on the Multimode Interference (MMI) Effect,” Japanese Journal of Applied Physics, Vol. 48, No. 4, Issue 2, pp. 04C118-1 – 04C118-5, April 2009.
Ricky W. Chuang, Zhen-Liang Liao, Chih-Chieh Cheng, and Mao-Teng Hsu, “Silicon optical waveguide modulator incorporating a hybrid structure of transistor and p+-n -n+diode,” Journal of Crystal Growth, Vol. 311, Issue 3, pp. 833-836, January 15, 2009.
K. H. Lee, R. W. Chuang, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu, J. C. Lin, and S. L. Wu, “Nitride-Based MSM Photodetectors with a HEMT Structure and a Low-TemperatureAlGaN Intermediate Layer,” Journal of Electrochemical Society, Vol. 155(12), pp. H959-H963, October 2008.
S. P. Chang, R. W. Chuang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, C. F. Kuo, and H. M .Chang, “Optical and Electrical Characteristics of ZnO Films Grown on Nitridated Si (100) Substrate with GaN and ZnO Double Buffer Layers,” IEEE J. Sel. Topics Quantum Electron., Vol. 14, No. 4, pp. 1058-1063, July/August 2008.
C. C. Huang, R. W. Chuang, S. J. Chang, J. C. Lin, Y. C. Cheng, and W. J. Lin, “MOCVD Growth of InN on Si(111) with Various Buffer Layers,” Journal of Electronic Materials, Vol. 37, No. 8, pp. 1054-1057, August 2008.
R. W. Chuang, P. C. Tsai, Y. K. Su, and C. H. Chu, “Improved ESD properties by combiningGaN-based light-emitting diode with MOS capacitor,” Solid-State Electronics, Vol. 52, Issue 7, pp. 1043-1046, July 2008.
Yung-Feng Chen, Wei-Cheng Chen, Ricky W. Chuang, Yan-Kuin Su, and Huo-Lieh Tsai, “GaInNAs p-i-n Photodetectors with Multiquantum Wells Structure,” Japanese Journal of Applied Physics, Vol. 47, No. 4B, pp. 2982-2986, April 25, 2008.
Ricky W. Chuang, Zhen-Liang Liao, Mao-Teng Hsu, Jia-Ching Liao, and Chih-Chieh Cheng, “Silicon Electro-Optic Modulator Fabricated on Silicon Substrate Utilizing the Three-Terminal Transistor Waveguide Structure,” Japanese Journal of Applied Physics, Vol. 47, No. 4B, pp. 2945-2949, April 25, 2008.
Ricky W. Chuang, Zhen-Liang Liao, Huai-Tzu Chiang, and Noritaka Usami, “Functional Enhancement of Metal-Semiconductor-Metal (MSM) Infrared Photodetectors onHeteroepitaxial SiGe-on-Si Using the Anodic Oxidation /Passivation Method,” Japanese Journal of Applied Physics, Vol. 47, No. 4B, pp. 2927-2931, April 25, 2008.
W. C. Chen, R. W. Chuang, Y. K. Su, and S. H. Hsu, “Controlling the nitrogen composition of InGaAsN quantum wells grown by MOVPE,” Journal of Physics and Chemistry of Solids, Vol. 69, No. 2-3, pp. 404-407, February/March 2008.
Ricky W. Chuang, Rong-Xun Wu, Li-Wen Lai, and Ching-Ting Lee, “ZnO-on-GaNheterojunction light-emitting diode grown by vapor cooling condensation technique,” Applied Physics Letters, Vol. 91, pp. 231113-1-231113-3, December 6, 2007.
R. W. Chuang, C. L. Yu, S. J. Chang, P. C. Chang, J. C. Lin, and T. M. Kuan, “Crystal growth and characterization of AlGaN/GaN heterostructures prepared on vicinal-cut sapphire (0001) substrates,” Journal of Crystal Growth, Vol. 308, Issue 2, pp. 252-257, October 15, 2007.
R. W. Chuang, S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F.Kuo, and H. M. Chang, “Gallium nitride metal-semiconductor-metal photodetectors prepared on silicon substrates,” Journal of Applied Physics, Vol. 102, Issue 7, pp. 073110 (4 pages), October 1, 2007.
W. C. Chen, R. W. Chuang, Y. K. Su, and S. H. Hsu, “Controlling the nitrogen composition of InGaAsN quantum wells grown by MOVPE,” Journal of Physics and Chemistry of Solids, available online 31 July 2007.
C. L. Yu, R. W. Chuang, S. J. Chang, P. C. Chang, K. H. Lee, and J. C. Lin, “InGaN/GaNMQW Metal-Semiconductor-Metal Photodiodes with Semi-Insulating Mg-doped GaN Cap Layers,” IEEE Photonics Technology Letters, Vol. 19, No. 11, pp. 846-848, June 1, 2007.
Ricky W. Chuang and Mao-Teng Hsu, “Silicon Optical Modulators in Silicon-on-Insulator (SOI) Substrate Based on the p-i-n Waveguide Structure,” Japanese Journal of Applied Physics, Vol. 46 Part 1, No. 4B, pp. 2445-2449, April 24, 2007.
Ricky W. Chuang, Zhen-Liang Liao, and Chih-Kai Chang, “Integrated Optical Beam Splitters Employing Symmetric Mode Mixing in SiO2/SiON/SiO2 Multimode Interference (MMI) Waveguides,” Japanese Journal of Applied Physics, Vol. 46 Part 1, No. 4B, pp. 2440-2444, April 24, 2007.
Yan-Kuin Su, Wei-Cheng Chen, Ricky W. Chuang, Shuo-Hsien Hsu, and Bing-Yang Chen, “InGaAsN Metal-Semiconductor-Metal Photodetectors with Transparent Indium Tin OxideSchottky Contacts,” Japanese Journal of Applied Physics, Vol. 46 Part 1, No. 4B, pp. 2373-2376, April 24, 2007.
P. C. Tsai, Ricky W. Chuang, and Y. K. Su, “Lifetime Tests and Junction-Temperature Measurement of InGaN Light-Emitting Diodes Using Patterned Sapphire Substrates,”IEEE/OSA Journal of Lightwave Technology, Vol. 25, No. 2, pp. 591-596, February 2007.
W. C. Chen, Y. K. Su, R. W. Chuang, M. C. Tsai, K. Y. Cheng, and Y. S. Wang, “Optical investigations on the surfactant effects of Sb on InGaAsN multiple quantum wells grown by MOVPE,” Journal of Crystal Growth, Vol. 298, pp. 145-149, January 2007.
S. J. Chang, C. L. Yu, R. W. Chuang, P. C. Chang, Y. C. Lin, Y. W. Jhan, and C. H. Chen, “Nitride-Based MIS-Like Photodiodes With Semiinsulating Mg-Doped GaN Cap Layers,”IEEE Sensors Journal, Vol. 6, No. 5, pp. 1043-1044, October 2006.
S. J. Young, L. W. Ji, R. W. Chuang, S. J. Chang, and X. L. Du, “Characterization of ZnOmetal–semiconductor–metal ultraviolet photodiodes with palladium contact electrodes,”Semicond. Sci. Technol., Vol. 21, .No. 10, pp. 1507-1511, October 2006.
Ricky W. Chuang, Yueh Jye Chiu, and Chia Lin Yu, “Iridium-based semi-transparent current spreading layer on short-period-superlattices (SPS) tunneling contact of InGaN/GaN LEDs,”Solid-State Electronics, Vol. 50, Issues 7-8, pp. 1212-1215, July-August 2006.
Y. K. Su, S. H. Hsu, R. W. Chuang, S. J. Chang, and W. C. Chen, “GaInNAs metal-semiconductor-metal near-infrared photodetectors,” IEE Proceedings - Optoelectronics, Vol. 153(3), pp. 128-130, June 2006.
W. C. Chen, Y. K. Su, R. W. Chuang, and S. H. Hsu, “Investigation of the optical properties of InGaAs(N):(Sb) quantum wells grown by metal organic vapor phase epitaxy,” Journal of Vacuum Science & Technology A, Vol. 24(3), pp. 591-594, May-June 2006.
K. T. Liu, Y. K. Su, R. W. Chuang, S. J. Chang, and Y. Horikoshi, “Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN,” Microelectronics Journal, Vol. 37 (5), pp. 417-420, May 2006.
W. C. Chen, Y. K. Su, R. W. Chuang, and S. H. Hsu, “Triple luminescence peaks observed in the InGaAsN/GaAs single quantum well grown by metalorganic vapor phase epitaxy,” Jpn. J. of Appl. Phys. Part 1 - Regular Papers Brief Communications & Review Papers, Vol. 45, No. 4B, pp. 3537-3539, April 25, 2006.
Y. D. Jhou, C. H. Chen, R. W. Chuang, S. J. Chang, Y. K. Su, P. C. Chang, P. C. Chen, H Hung, S. M. Wang, and C. L. Yu, “Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures,” Solid-State Electronics, Vol. 49, No. 8, pp. 1347-1351, August 2005.
K. T. Liu, Y. K. Su, R. W. Chuang, S. J. Chang, and Y Horikoshi, “C and N co-implantation in Be-doped GaN,” Semiconductor Science and Technology, Vol. 20, No. 8, pp. 740-744, August 2005.
C. K. Wang, R. W. Chuang, S. J. Chang, Y. K. Su, S. C. Wei, T. K. Lin, T. K. Ko, Y. Z.Chiou and J. J. Tang, “High temperature and high frequency characteristics of AlGaN/GaNMOS-HFETs with photochemical vapor deposition SiO2 layer,” Mater. Sci. Eng. B - Solid State Materials for Advanced Technology, Vol. 119, No. 1, pp. 25-28, May 2005.
S. H. Hsu, Y. K. Su, R. W. Chuang, S. J. Chang, W. C. Chen and W. R. Chen, “Study of electronic properties by persistent photoconductivity measurement in GaxIn1-xNyAs1-y grown by MOCVD,” Jpn. J. Appl. Phys. Part 1 - Regular Papers, Short Notes & Review Papers, Vol. 44, No. 4B, pp. 2454-2457, April 2005.
C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, L. W. Wu and C. C. Lin, “Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface,” Mater. Sci. Eng. B - Solid State Materials for Advanced Technology, Vol. 112, No. 1, pp. 10-13, September 2004.
C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, C. H. Kuo, J. M. Tsai and C. C. Lin, “InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers,” Mater. Sci. Eng. B - Solid State Materials for Advanced Technology, Vol. 111, No. 2-3, pp. 214-217, August 25, 2004.
Chin C. Lee and Ricky W. Chuang, “A dry electromigration process for fabricating deep optical channel waveguides on glass and their characterization,” Materials Science and Engineering B - Solid State Materials for Advanced Technology, Vol. 111, Issue 1, pp. 40-48, August 15, 2004.
Chin C. Lee, Ricky W. Chuang and Dong W. Kim, “A fluxless fabrication process producingSn-rich Bi-Sn joints with high melting temperature,” Materials Science and Engineering A - Structural Material Properties, Microstructure, and Processing, Vol. 374, Issues 1-2, pp. 280-284, June 15, 2004.
Ricky W. Chuang, Dongwook Kim, Jeong Park, and Chin C. Lee, “A fluxless process of producing tin-rich gold-tin joints in air,” IEEE Trans. Components and Packaging Technology, Vol. 27, No. 1, pp. 177-181, March 2004.
S. V. Bandara, S. D. Gunapala, J. K. Liu, S. B. Rafol, D. Z. Ting, J. M. Mumolo, R. W. Chuang, T. Q. Trinh, J. H. Liu, K. K. Choi, “Four-band quantum well infrared photodetectorarray,” Infrared Physics & Technology, Vol. 44, Issues 5-6, pp. 369-375, October-December 2003.
Chin C. Lee and Ricky W. Chuang, “Fluxless non-eutectic joints fabricated using gold-tin multilayer composite,” IEEE Transactions on Components and Packaging Technologies, vol.26, issue 2, pp. 416-422, June 2003.
Ricky W. Chuang and Chin C. Lee, “Silver-indium joints produced at low temperature for high temperature devices,” IEEE Transactions on Components and Packaging Technologies, vol. 25, issue 3, pp. 453-458, September 2002.
Ricky W. Chuang and Chin C. Lee, “Low loss deep glass waveguides produced with dry silver electromigration process,” IEEE/OSA Journal of Lightwave Technology, vol. 20, no. 8, pp. 1590-1597, August 2002.
Ricky W. Chuang and Chin C. Lee, “High temperature non-eutectic indium-tin joints fabricated by a fluxless process,” Thin Solid Films, vol. 414, issue 2, pp. 175-179, July 22, 2002.
W. Wu, C. C. Lee, C. S. Tsai, J. Su, W. So, H. J. Yoo, and R. Chuang, “Fabrication of ferromagnetic/semiconductor waveguide structures and application to microwave bandstopfilter,” J. Vac. Sci. Technol. A - Vacuum Surfaces and Films, Vol. 19, No. 4, pp. 1758-1762, July-August 2001.
W. Wu, C. C. Lee, C. S. Tsai, J. Su, H. J. Yoo, Ricky Chuang, H. Hopster, “Epitaxially grown Fe/Ag ultra thin films on GaAs and their application to widewand microwave notch filter,”Journal of Crystal Growth, vol. 225, issue 2-4, pp. 534-539, May 2001.
William W. So, Selah Choe, Ricky Chuang, and Chin C. Lee, “An effective diffusion barrier metallization process on copper,” Thin Solid Films, Vol. 376, No. 1-2, pp. 164-169, November 1, 2000.
Y. S. Zhao, C. L. Jensen, R. W. Chuang, H. P. Lee, Z. J. Dong, and R. Shih, “A simple and reliable wafer-level electrical probing technique for III-Nitride light-emitting epitaxial structures,” IEEE Electron Device Lett., Vol. 21, No. 5, pp. 212-214, May 2000.
D. L. Hibbard, R. W. Chuang, Y. S. Zhao, C. L. Jensen, H. P. Lee, Z. J. Dong, R. Shih, and M. Bremser, “Thermally induced variation in barrier height and ideality factor of Ni/Au contacts to p-GaN,” J. Electronic Materials, Vol. 29, No. 3, pp. 291-296, March 2000.
R. W. Chuang, A. Q. Zou, H. P. Lee, Z. J. Dong, F. F. Xiong, and R. Shih, “Contact resistance of InGaN/GaN light emitting diodes grown on the production model multi-wafer MOVPE reactor,” MRS Internet Journal of Nitride Semiconductor Research 4: Art. No. G6.42, Suppl. 1, 1999.