Md. Aftab Baig, Cheng-Jui Yeh, Shu-Wei Chang, Bo-Han Qiu, Xiao-Shan Huang, Cheng-Hsien Tsai, Yu-Ming Chang, Po-Jung Sung, Chun-Jung Su, Ta-Chun Cho, Sourav De, Darsen Lu*, Yao-Jen Lee, Wen-Hsi Lee, Wen-Fa Wu, Wen-Kuan Yeh, “3D Monolithic Stacking of Complementary-FET on CMOS for Next Generation Compute-In-Memory SRAM,” IEEE Journal of the Electron Devices Society, vol. 11, pp. 107-113, Dec. 2022, DOI: 10.1109/JEDS.2022.3230542.

Ke-Jing Lee, Yu-Chuan Weng, Li-Wen Wang, Hsin-Ni Lin, Parthasarathi Pal, Sheng-Yuan Chu, Darsen Lu and Yeong-Her Wang*, “High Linearity Synaptic Devices Using Ar Plasma Treatment on HfO2 Thin Film with Non-Identical Pulse Waveforms,” MDPI Nanomaterials, vol. 12, no. 18, p. 3252, Sep. 2022, DOI: 10.3390/nano12183252.

Shu-Wei Chang, Yu-Ming Chang, Wen-His Lee, Yao-Jen Lee, Darsen Lu*, “Nanosheet-Compatible Complementary-FET Logic Non-Volatile Memory Device,” ECS Journal of Solid State Science and Technology, vol. 11, no. 9, Sep. 2022, DOI: 10.1149/2162-8777/ac8dbf.

S. De*, F. Müller, H.-H. Le, M. Lederer, Y. Raffel, T. Ali, D. Lu and T. Kämpfe, “READ-Optimized 28nm HKMG Multi-bit FeFET Synapses for Inference-Engine Applications,” IEEE Journal of the Electron Devices Society, vol. 10, pp. 637-641, Aug. 2022, DOI: 10.1109/JEDS.2022.3195119.

P. Pal, S. Mazumder, C.-W. Huang, D. D Lu and Y.-H. Wang*, “Impact of Barrier Layer on High Thermal and Mechanical Stability of a Flexible Resistive Memory in Neural Network Application,” ACS Applied Electronic Materials, vol. 4, no. 3, Feb. 2022, DOI: 10.1021/acsaelm.1c01219.

Md. A. Baig, H.-H. Le, S. De, C.-W. Chang, C.-C. Hsieh, X.-S. Huang, Y.-J. Lee, D. Lu*, “Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack,” Semiconductor Science and Technology, vol. 37, no. 2, Feb. 2022, DOI: 10.1088/1361-6641/ac3f22.

S. De*, Md. A. Baig, B.-H. Qiu, F. Müller, H.-H. Le, M. Lederer, T. Kämpfe, T. Ali, P.-J. Sung, C.-J. Su, Y.-J. Lee, D. Lu*, “Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications,” Frontiers in Nanotechnology†, Jan. 26, 2022, DOI: 10.3389/fnano.2021.826232.

S.-W.Chang, T.-H. Lu, C.-Y. Yang, C.-J. Yeh, M.-K. Huang, C.-F. Meng, P.-J. Chen, T.-H. Chang, Y.-S. Chang, J.-W. Jhu, T.-Z. Hong, C.-C. Ke, X.-R. Yu, W.-H. Lu, M. A. Baig, T.-C. Cho, P.-J. Sung, C.-J. Su, F.-K. Hsueh, B.-Y. Chen, H.-H. Hu*, C.-T. Wu, K.-L. Lin, W. C.-Y. Ma, D. D. Lu, K.-H. Kao, Y.-J. Lee*, C.-L. Lin, K.-P. Huang, K.-M. Chen, Y. Li, S. Samukawa, T.-S. Chao, G.-W. Huang, W.-F. Wu, W.-H. Lee, J.-Y. Li, J.-M. Shieh, J.-H. Tarng, Y.-H. Wang*, W.-K. Yeh, “First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration with Dual Work Function Gate for Ultralow-Power SRAM and RF Applications,” IEEE Transaction on Electron Devices, vol. 69, no. 4, pp. 2101-2107, Jan. 25, 2022, DOI: 10.1109/TED.2021.3138947.

S. De, H.-H. Le, B.-H. Qiu, Md. A. Baig, P.-J. Sung, C.-J. Su, Y.-J. Lee and D.-D. Lu*, “Robust Binary Neural Network Operation from 233 K to 398 K via Gate Stack and Bias Optimization of Ferroelectric FinFET Synapses,” IEEE Electron Device Letters, vol. 42, no. 8, Aug. 2021, pp. 1144–1147, DOI: 10.1109/LED.2021.3089621.

S. De, B.-H. Qiu, W.-X. Bu, Md. A. Baig, P.-J. Sung, C.-J. Su, Y.-J. Lee and D. D. Lu*, “Uniform Crystal Formation and Electrical Variability Reduction in Hafnium Oxide Based Ferroelectric Memory by Thermal Engineering,” ACS Applied Electronic Materials, vol. 3, no. 2, 2021, pp. 619—628, DOI: 10.1021/acsaelm.0c00610.

W. Lin, D. D. Lu*, Y.-X. Hong and W.-C. Hsu, “Automated Extraction of Barrier Heights for Asymmetric MIM Tunneling Diodes,” Solid State Electronics, vol. 172, no. 107879, Oct. 2020, DOI: 10.1016/j.sse.2020.107879.

D. D. Lu*, S. De, M. A. Baig, B.-H. Qiu and Y.-J. Lee, “A Computationally Efficient Compact Model for Ferroelectric FETs for the Simulation of Online Training of Neural Networks,” Semiconductor Science and Technology, vol. 35, no. 9, Jul. 2020, DOI: 10.1088/1361-6641/ab9bed

P.-J. Sung, C.-J. Su, S.-H. Lo, F.-K. Hsueh, D. D. Lu, Y.-J. Lee*, T.-S. Chao, “Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter,” IEEE Journal of the Electron Devices Society, vol. 8, pp. 474–480, Apr. 2020, DOI: 10.1109/JEDS.2020.2987005.

C.-W. Wang, H. Ku, C.-Y. Chiu, S. De, B.-H. Qiu, C. Shin*, and D. Lu*, “Compact Model for PZT Ferroelectric Capacitors with Voltage Dependent Switching Behavior,” Semiconductor Science and Technology, vol 35, no. 5, Apr. 2020, DOI: 10.1088/1361-6641/ab7c79.

S.-H. Chen, S.-W. Lian, T. R. Wu, T.-R. Chang, J.-M. Liou, D. D. Lu, K.-H. Kao*, N.-Y. Chen, W.-J. Lee and J.-H. Tsai, “Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs,” IEEE Transaction on Electron Devices, vol. 66, no. 6, pp. 2509–2512, Jun. 2019, DOI: 10.1109/TED.2019.2912058.

Y.-F. Hsieh*, S.-H. Chen, N.-Y. Chen, W.-J. Lee, J.-H. Tsai, C.-N. Chen, M.-H. Chiang, D. D. Lu and K.-H. Kao*, “An FET With a Source Tunneling Barrier Showing Suppressed Short-Channel Effects for Low-Power Applications,” IEEE Transaction on Electron Devices, vol. 65, no. 3, pp. 855–850, Mar. 2018, DOI: 10.1109/TED.2018.2791467.

A. B. Sachid*, Y.-M. Huang, Y.-J. Chen, C.–C. Chen, D. D. Lu, M.-C. Chen, C. Hu, “FinFET with Encased Air-Gap Spacers for High-Performance and Low-Energy Circuits,” IEEE Electron Device Letters, vol. 38, no. 1, pp. 16-19, Jan 2017, DOI: 10.1109/LED.2016.2628768.

Q. Cao*, S. J. Han, G. S. Tulevski, Y. Zhu, D. D. Lu, W. Haensch, “Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics.” in Nature Nanotechnology, 8(3), pp. 180-186, 2013, DOI:10.1038/NNANO.2012.257.

R. Muralidhar*, J. Cai*, D. J. Frank*, P. Oldiges*, D. Lu*, and I. Lauer*, “Meeting the Challenge of Multiple Threshold Voltages in Highly Scaled Undoped FinFETs,” IEEE Transaction on Electron Devices, vol 60, issue 3, pp. 1276-1278, Mar 2013, DOI: 10.1109/TED.2013.2241767.

S. J. Han*, S. Oida, K. A. Jenkins, D. Lu and Y. Zhu, “Multifinger Embedded T-shaped Gate Graphene RF Transistors with High fMAX/fT Ratio,” IEEE Electron Device Letters, vol. 34, no. 10, pp. 1340-1342, Oct. 2013, DOI: 10.1109/LED.2013.2276038.

M. A. Karim, Y.-S. Chauhan, S. Venugopalan, A. B. Sachid, D. D. Lu, et al., “Extraction of Isothermal Condition and Thermal Network in UTBB SOI MOSFETs,” IEEE Electron Device Letters, vol. 33, pp. 1306-1308, Sep 2012, DOI: 10.1109/LED.2012.2205659

S. Khandelwal, Y. S. Chauhan, D. D. Lu, et al., “BSIM-IMG: A Compact Model for Ultrathin-Body SOI MOSFETs With Back-Gate Control,” IEEE Tran. on Electron Devices, vol 59, issue 8, pp. 2019-2026, 2012，DOI: 10.1109/TED.2012.2198065.

S. Venugopalan, D. D. Lu, Y. Kawakami, P. M. Lee, A. M. Niknejad and C. Hu, “BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit simulations,” Solid-state Electronics, 67(1), 79-89, 2012, DOI: 10.1016/j.sse.2011.09.001.

D. D. Lu, M. V. Dunga, C.-H. Lin, A. M. Niknejad and C. Hu, “A Computationally Efficient Compact Model for Fully-Depleted SOI MOSFETs with Independently Controlled Front- and Back-Gates,” Solid State Electronics, vol. 62, issue 1, pp. 31-39, Aug 2011, DOI: 10.1016/j.sse.2010.12.015.

D. D. Lu, C.-H. Lin, A. M. Niknejad and C. Hu, “Compact Modeling of Variation in FinFET SRAM Cells,” IEEE Design and Test of Computers, vol. 27, no. 2, Mar/Apr 2010, DOI: 10.1109/MDT.2010.39.

C.-H. Lin, M. V. Dunga, D. D. Lu, A. M. Niknejad, and C. Hu, "Performance-Aware Corner Model for Design for Manufacturing," IEEE Transaction on Electron Devices, vol, 56, no. 4, April. 2009, DOI: 10.1109/TED.2008.2011845.

M. V. Dunga, C.-H. Lin, X. Xi, D. D. Lu, A. M. Niknejad, and C. Hu, "Modeling Advanced FET Technology in a Compact Model," IEEE Transaction on Electron Devices, vol. 53, no. 9, Sept. 2006, DOI: 10.1109/TED.2005.881001.

P. F. Morin, L. Grenouillet, N. Loubet, A. Pofelski, D. Lu, Q. Liu, E. Augendre, S. Maitrejean, V. Fiori, B. de Salvo, B. Doris, W. Kleemeier, "Mechanical Analyses of Extended and Localized UTBB Stressors Formed with Ge Enrichment Techniques," ECS Transactions, 66 (4), 57-65, 2015

D. Lu, P. Morin, B. Sahu, T. B. Hook, P. Hashemi and A. Scholze et al., “(Invited) Silicon Germanium FinFET Device Physics, Process Integration and Modeling Considerations,” ECS Transactions vol. 64, no. 6, pp. 337-345, 2014.

W.-C. Lin, H.-P. Huang, K.-H. Kao, M.-H. Chiang, D. Lu, W.-C. Hsu, Y.-H. Wang, W.C.-Y. Ma, H.-H. Tsai, Y.-J. Lee, H.-L. Chiang, J.-F. Wang and I. Radu, “MOSFET Characterization with Reduced Supply Voltage at Low Temperatures for Power Efficiency Maximization,” ESSDERC 2023, Lisbon, Portugal, pp. 9-12, Sep. 2023, DOI: 10.1109/ESSDERC59256.2023.10268514

(Invited) Darsen D. Lu*, “Computing-in-Memory with Ferroelectric Materials and Beyond,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 2023, DOI: 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10133993

C.-Y. Yang, P.-J. Sung*, M.-H. Chuang, C.-W. Chang, Y.-J. Shih, T.-Y. Huang, D. D. Lu*, T.-C. Hong, X.-R. Yu, W.-H. Lu, S.-W. Chang, J.-J. Tsai, M.-K. Huang, T.-C. Cho, Y.-J. Lee*, K.-L. Luo, C.-T. Wu, C.-J. Su, K.-H. Kao, T.-S. Chao, W.-F. Wu, Y.-H. Wang*, “First Demonstration of Heterogeneous L-shaped Field Effect Transistor (LFET) for Angstrom Technology Nodes,” IEEE International Electron Devices Meeting, Dec. 2022, DOI: 10.1109/IEDM45625.2022.10019487.

Shu-Wei Chang, Jia-Hon Chou, Wen-Hsi Lee, Yao-Jen Lee and Darsen D. Lu*, “Process TCAD for RF Performance Step-Up of Three-dimensional Stackable Complementary FET and Improvement Suggestions, “International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Granada, Spain, Sep. 6-8, 2022.

X.-R. Yu, W.-H Chang*, T.-C. Hong, P.-J. Sung, A. Agarwal, G.-L. Luo, C.-T. Wu, K.-H. Kao, C.-J. Su, S.-W. Chang, W.-H. Lu, W.-J. Chen, P.-Y. Fu, J.-H. Lin, P.-H. Wu, T.-C. Cho, W. C.-Yu. Ma, D.-D. Lu, R.W. Chuang, T.-S. Chao, T. Maeda, Y.-J. Lee*, W.-F. Wu, W.-K. Yeh, Y.-H. Wang*, “First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering,” Proc. IEEE Symposium on VLSI Technology, pp. 399-400, Honolulu, HI, USA, Jun. 2022, DOI: 10.1109/VLSITechnologyandCir46769.2022.9830316.

S. De, Md. A. Baig, B.-H. Qiu, H.-H. Le, Y.-J. Lee* and D. Lu*, “Neuromorphic Computing with Fe-FinFETs in the Presence of Variation,” VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 2022, DOI: 10.1109/VLSI-TSA54299.2022.9771015.

S.-W.Chang, T.-H. Lu, C.-Y. Yang, C.-J. Yeh, M.-K. Huang, C.-F. Meng, P.-J. Chen, T.-H. Chang, Y.-S. Chang, J.-W. Jhu, T.-Z. Hong, C.-C. Ke, X.-R. Yu, W.-H. Lu, M. A. Baig, T.-C. Cho, P.-J. Sung, C.-J. Su, F.-K. Hsueh, B.-Y. Chen, H.-H. Hu*, C.-T. Wu, K.-L. Lin, W. C.-Y. Ma, D.-D. Lu, K.-H. Kao, Y.-J. Lee*, C.-L. Lin, K.-P. Huang, K.-M. Chen, Y. Li, S. Samukawa, T.-S. Chao, G.-W. Huang, W.-F. Wu, W.-H. Lee, J.-Y. Li, J.-M. Shieh, J.-H. Tarng, Y.-H. Wang*, W.-K. Yeh, “First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3D Integration with Dual Workfunction Gate for Ultra Low-power SRAM and RF Applications,” Proc. IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, Dec. 13-15, 2021, DOI: 10.1109/IEDM19574.2021.9720675.

Szu-Han Hu, Min-Jung Tsai, Fang-Rong Zhang, Ke-Jing Lee, Dar-Sen Lu, Ting-Chang Chang, Yeong-Her  Wang*, “Stacked Three-dimensional Crossbar Resistive Random Access Memory based Synapse for Neuromorphic Computing, “International Electron Devices and Materials Symposium (IEDMS), Tainan, Taiwan, Nov. 2021.

Min-Jung Tsai, Szu-Han Hu, Chih-Wei Hunag, Ke-Jing Lee, Darsen Lu, Ting-Chang Chang, Yeong-Her Wang*, “HfO2 and TiO2 Stacking Resistive Random Access Memory Structure for Neuromorphic Synapse Applications,“ International Electron Devices and Materials Symposium (IEDMS), Tainan, Taiwan, Nov. 2021.

Parthasarathi Pal, Chih-Wei Huang, Darsen Lu, Yeong-Her Wang*, “High Temperature Stability of A Flexible Stacked Resistive Memory Device in the Deep Neural Network Application,” International Electron Devices and Materials Symposium (IEDMS), Tainan, Taiwan, Nov. 2021.

Parthasarathi Pal, Fang-Rong Zhang, Darsen D. Lu, and Yeong-Her Wang*, “Effect of an Interfacial layer on the Thermal and Mechanical Stability of a Heterogeneous Flexible Resistive Switching Device in the Deep Neural Network Simulations,” The 9th International Conference on Science, Education, and Viable Engineering (ICSEVEN), Taitung, Taiwan, Oct. 2021.

D. D. Lu* and I.-H. Chen, “A Novel Three-Dimensional 6T-SRAM Cell Featuring Vertical Transistors and 24F2 Layout Area,” IEEE Intl. Conf. on App. Science & Innovation (ICASI), Alishan, Chiayi, Taiwan, Sep. 2021, DOI: 10.1109/ICASI52993.2021.9568447.

S. De*, D. D. Lu*, H.-H. Le, S. Mazumder, Y.-J. Lee*, W.-C. Tseng, B.-H. Qiu, Md. A. Baig, P.-J. Sung, C.-J. Su, C.-T. Wu, W.-F. Wu, W.-K. Yeh, Y.-H. Wang, “Ultra-Low Power Robust 3bit/cell Hf0.5Zr0.5O2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology,“ Proc. Symposium on VLSI Technology, Kyoto, Japan, Jun. 13-19, 2021.

Pei-En Lin, Chia-Hao Cheng, Ching-Hsiang Chang, Cheng-Hsien Tsai, Darsen D. Lu, Yi-Ting Tseng, Ting-Chang Chang, Jen-Sue Chen, “Electroforming-free resistive switching of WOx/ZrOx stack for neuromorphic computing systems,” Materials Challenges for Memory (MCFM), Apr. 11-13, 2021.

S. De*, W.-X. Bu, B.-H. Qiu, C.-J. Su, Y.-J. Lee and D. D. Lu*, “Alleviation of Charge Trapping and Flicker Noise in HfZrO2-Based Ferroelectric Capacitors by Thermal Engineering,” IEEE International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 2021, DOI: 10.1109/VLSI-TSA51926.2021.9440091.

J.-Y. Ciou, S. De*, C.-W. Wang, W. Lin, Y.-J. Lee and D. Lu*, “Analytical Modelling of Ferroelectricity Instigated Enhanced Electrostatic Control,” 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Chengdu, China, Apr. 2021, DOI: 10.1109/EDTM50988.2021.9420931.

T.-Z. Hong, W.-H. Chang*, A. Agarwal, Y.-T. Huang, C.-Y. Yang, T.-Y. Chu, H.-Y. Chao, Y. Chuang, S.-T. Chung, J.-H. Lin, S.-M. Luo, C.-J. Tsai, M.-J. Li, X.-R. Yu, N.-C. Lin, T.-C. Cho, P.-J. Sung*, C.-J. Su, G.-L. Luo, F.-K. Hsueh, K.-L. Lin, H. Ishii, T. Irisawa, T. Maeda, C.-T. Wu, W. C.-Y. Ma, D.-D. Lu, K.-H. Kao, Y.-J. Lee*, H. J.-H. Chen, C.-L. Lin, R. W. Chuang, K.-P. Huang, S. Samukawa, Y.-M. Li, J.-H. Tarng, T.-S. Chao, M. Miura, G.-W. Huang, W.-F. Wu, J.-Y. Li, J.-M. Shieh, Y.-H. Wang, W.-K. Yeh, “First Demonstration of heterogenous Complementary FETs utilizing Low-Temperature (200 °C) Hetero-Layers Bonding Technique (LT-HBT),” Proc. IEEE International Electron Devices Meeting (IEDM), Dec. 2020, DOI: 10.1109/IEDM13553.2020.9372001.

S. De, Md. A. Baig, B.-H. Qiu, D. Lu*, P.-J. Sung, F.-K. Hsueh, Y.-J. Lee, C.-J. Su, “Tri-Gate Ferroelectric FET Characterization and Modelling for Online Training of Neural Networks at Room Temperature and 233K,” IEEE Device Research Conference (DRC), Ohio State University, Ohio, USA, Jun. 2020, DOI: 10.1109/DRC50226.2020.9135186.

H.-H. Le, W.-C. Hong, J.-W. Du, T.-H. Lin, Y.-X. Hong, I-H. Chen, W.-J. Lee, N.-Y. Chen and D. D. Lu*, “Ultralow Power Neuromorphic Accelerator for Deep Learning Using Ni/HfO2/TiN Resistive Random Access Memory,” 4th IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia, Mar. 2020, DOI: 10.1109/EDTM47692.2020.9117915.

S.-W. Chang, P.-J. Sung, T.-Y. Chu, D. D. Lu et al., “First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications,” Proc. IEEE International Electron Devices Meeting (IEDM), 2019, DOI: 10.1109/IEDM19573.2019.8993525.

P. J Sung, C. J. Su, D. D. Lu et al., “Fabrication of Ω-gated Negative Capacitance FinFETs and SRAM,” VLSI Technology, Systems and Applications (VLSI-TSA), 2019, DOI: 10.1109/VLSI-TSA.2019.8804663.

D. D. Lu et al., “(Invited) Compact Device Models for FinFET and Beyond,” Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) Tech. Dig., Kitakyushu, Japan, July 2018, arXiv:2005.02580.

D. D. Lu, F.-X Liang, Y.-C. Wang and H.-K. Zeng, “NVMLearn: A Simulation Platform for Non-Volatile-Memory-Based Deep Learning Hardware,” IEEE Intl. Conf. on App. Science & Innovation (ICASI), Sapporo, Japan, May 2017, DOI: 10.1109/ICASI.2017.7988347. (First Prize Paper Award)

D. D. Lu, A. B. Sachid, Y.-M. Huang, Y.-J. Chen, C.-C. Chen, M.-C. Chen, C. Hu, “Stressor Design for FinFETs with Air-Gap Spacers,” VLSI Technology, Systems and Applications (VLSI-TSA), Apr. 2017, DOI: 10.1109/VLSI-TSA.2017.7942485.

T. Yamashita, S. Mehta, V.S. Basker, R. Southwick, A. Kumara, R. Kambhampatib, R. Sathiyanarayanana, J. Johnsona, T. Hook, S. Cohen, J. Li, A. Madan, Z. Zhu, L. Tai, Y. Yao, P. Chinthamanipeta, M. Hopstaken, Z. Liu, D. Lu et al., “A Novel ALD SiBCN Low-k Spacer for Parasitic Capacitance Reduction in FinFETs,” Symposium on VLSI Technology, Digest of Technical Papers, June 2015, DOI: 10.1109/VLSIT.2015.7223659.

P. Morin, L. Grenouillet, N. Loubet, A. Pofelski, D. Lu et al., “Mechanical analyses of extended and localized UTBB stressors formed with Ge enrichment techniques,” ECS Transactions, vol. 66, no. 4, pp. 57-65, 2015, DOI: 10.1149/MA2015-01/21/1364.

D. Lu, K. Cheng, P. Morin, N. Loubet, T. Hook, and D. Guo et al., “Dielectric Isolated FinFET on Bulk Substrate,” IEEE S3S conference, Oct. 2014, DOI: 10.1109/S3S.2014.7028188.

D. Lu, P. Morin, B. Sahu, T. B. Hook, P. Hashemi and A. Scholze et al., “(Invited) Silicon Germanium FinFET Device Physics, Process Integration and Modeling Considerations,” ECS Transactions, vol. 64, no. 6, pp. 337-345, 2014, DOI: 10.1149/06406.0337ecst.

K. Cheng, S. Seo, J. Faltermeier, D. Lu et. al., “Bottom Oxidation through STI (BOTS) – A Novel Approach to Fabricate Dielectric Isolated FinFET on Bulk Substrates,” Symposium on VLSI Technology, Digest of Technical Papers, June 2014, DOI: 10.1109/VLSIT.2014.6894390.

S.-J. Han, S. Oida, K. A. Jenkins, D. D. Lu, "High fMAX/fT ratio in multi-finger embedded T-shaped gate graphene transistors, " IEEE Device Research Conference, 2013, DOI: 10.1109/DRC.2013.6633781.

A. Khakifirooz, R. Sreenivasan, B.N. Taber, F. Allibert, P. Hashemi, W. Chern, N. Xu, E.C. Wall, S. Mochizuki, J. Li, Y. Yin, N. Loubet, A. Reznicek, S.M. Mignot, D. Lu et. al., “Aggressively Scaled Strained Silicon Directly on Insulator (SSDOI) FinFETs,” Proceedings of the S3S Conference, pp. 147-150, 2013, DOI: 10.1109/S3S.2013.6716520.

D. D. Lu, J. Chang, M. A. Guillorn, C.-H. Lin, J. Johnson, P. Oldiges and K Rim, “A comparative study of fin-last and fin-first SOI FinFETs,” International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sept. 2013，DOI: 10.1109/SISPAD.2013.6650596.

D. Lu, C.-H. Lin, A. Niknejad and C. Hu, “Multi-Gate MOSFET Compact Model BSIM-MG,” a chapter in Compact Modeling Principles, Techniques, and Applications (ISBN: 978-90-481-8613-6), Springer, 2010, DOI: 10.1007/978-90-481-8614-3_13.

T. H. Morshed, M. V. Dunga, J. Zhang, D. D. Lu, A. M. Niknejad and C. Hu, "Compact Modeling of Flicker Noise Variability in Small Size MOSFETs," International Electron Device Meeting (IEDM), Dec. 2009, DOI: 10.1109/IEDM.2009.5424237.

D. D. Lu, C.-H. Lin, S. Yao, W. Xiong, F. Bauer, C. R. Cleavelin, A. M. Niknejad, and C. Hu, “Design of FinFET SRAM Cells using a Statistical Compact Model,” International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sept. 2009, DOI: 10.1109/SISPAD.2009.5290234.

C.-H. Lin, M. V. Dunga, D. Lu, A. M. Niknejad and C. Hu, ”Statistical Compact Modeling of Variations in Nano MOSFETs,” Proc. VLSI Technology, Systems and Applications (VLSI-TSA), Oct 2008, DOI: 10.1109/VTSA.2008.4530849.

D. D. Lu, M. V. Dunga, C.-H. Lin, A. M. Niknejad and C. Hu, ”A Multi-Gate MOSFET Compact Model Featuring Independent-Gate Operation,” International Electron Device Meeting (IEDM), Dec. 2007, DOI: 10.1109/IEDM.2007.4419001.

M. V. Dunga, C.-H. Lin, D. D. Lu, W. Xiong, C. R. Cleavelin, P. Patruno, J.-R. Huang, F.-L. Yang, A. M. Niknejad, and C. Hu, “BSIM-MG: A versatile multi-gate FET model for mixed-signal design,” Symposium on VLSI Technology, June 2007, DOI: 10.1109/VLSIT.2007.4339727. (Best Student Paper Award)

Darsen D. Lu, Huai-Kuan Zeng, Yi-Ci Wang, Fu-Xiang Liang (2017, Sep). Nvmsim: a Computer-aided-design Tool for Nonvolatile Memory Based Cognitive Computing Hardware. International Confererence on Cognitive Science

D. Lu et al., “A Multi-Gate CMOS Compact Model – BSIMMG,” 2010 MOS-AK Workshop.

Chenming Hu, Ali Niknejad, V. Sriramkumar, Darsen Lu, Yogesh Chauhan, Muhammed Kahm, Angada Sachid, "BSIM-IMG: A Turnkey compact model for fully depleted technologies," SOI Conference 2012

D. Lu and C. Hu, “A Compact Model for Parasitic Resistance in FinFETs,” 2009 SRC TECHCON.

C. Hu, M. Dunga, C. H. Lin, D. Lu, A. M. Niknejad, ”Comapct Modeling for New Transistor Structures,” SISPAD 2007, pp. 285-288, Sep 2007.

D. Lu, C.-H. Lin, M. Dunga, A. Niknejad and C. Hu, ”A compact model for Asymmetric Multi-gate MOSFETs with Effieicnt Surface Potential Approximations”, 2007 SRC TECHCON (Best in Session)

Darsen Lu, "Enabling Electronic Circuit Simulation for New Semiconductor Technologies -- using the Double-Gate MOS Transistor as an Example, " 2018 Conference on Advanced Topics and Auto Tuning (ATAT) in High-Performance Scientific Computing, Tainan, Taiwan, 2018

Darsen D. Lu, "Applications of Memory-Device Compact Models toward Neuromorphic Circuits for Artificial Intelligence," Nano Korea, KINTEX, South Korea, 7/3-5, 2019

Chung H. Lam Philip J. Oldiges CHUNG-HSUN LIN Darsen D. Lu. FinFET PCM access transistor having gate-wrapped source and drain regions. US9825094B2 11/30/2015

K. Cheng, B. B. Doris, A. Khakifirooz, D. D. Lu, A. Reznicek, K. Rim, “Structure and method to make strained FinFET with improved junction capacitance and low leakage,” US patent #9,276,113, #9,653,541, Mar. 1, 2016

K. Cheng, B. B. Doris, A. Khakifirooz, D. D. Lu, A. Reznicek and K. Rim, “Structure and method for advanced bulk fin isolation,” US patent #9,299,618, #9,564,439, #9,583,492, Mar. 29, 2016

K. Cheng, B. B. Doris, A. Khakifirooz, D. D. Lu, A. Reznicek and K. Rim, “Semiconductor device including dielectrically isolated finFETs and buried stressor,” US patent #9,362,400, Jun. 7, 2016

K. Cheng, A. Khakifirooz, D. D. Lu, G. Shahidi, “Distributed decoupling capacitor,” US patent #9,455,250, #10,262,991, Sep. 27, 2016

B. B. Doris, A. Khakifirooz, D. D. Lu, P. Oldiges, “Radiation tolerant device structure,” US patent #9,515,171, Dec. 6, 2016.

P. Hashemi, A. Khakifirooz, D. Lu, A. Reznicek, D. Schepis, “Lateral bipolar junction transistor having graded SiGe base,” US patent #9,525,027, Dec. 20, 2016

K. Cheng, B. B. Doris, A. Khakifirooz, D. D. Lu, A. Reznicek, K. Rim, “Strain release in pFET regions,” US patent #9,543,323, #9,761,610, #9,966,387, Jan. 10, 2017

K. Cheng, B. B. Doris, A. Khakifirooz, D. D. Lu, A. Reznicek, K. Rim, “Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices,” US patent #9,548,386, #9,997,540, Jan. 17, 2017

K. Cheng, B. B. Doris, D. D. Lu, A. Khakifirooz, K. Rim, “Dielectrically isolated fin with improved fin profile,” US patent #9,548,213, #9,917,188, Jan. 17, 2017.

C. H. Lam, C.-H. Lin, D. D. Lu, P. J. Oldiges, “Asymmetric FinFET memory access transistor,” US patent #9,553,173, #9,583,624, Jan. 24, 2017

K. Cheng, T. Yamashita, D. D. Lu, X. Miao, “FinFET with reduced parasitic capacitance,” US patent #9,786,737, #10,177,223, Oct. 10, 2017

C. H. Lam, P. J. Oldiges, C.-H. Lin, D. D. Lu, “FinFET PCM access transistor having gate-wrapped source and drain regions,” US patent #9,825,094, 9,825,094, Nov. 21, 2017

K. Cheng, D. D. Lu, A. Reznicek, B. B. Doris, A. Khakifirooz, K. Rim, “Semiconductor structures having increased channel strain using fin release in gate regions,” US patent #9,954,083, #10,056,474, #10,347,752, Apr. 24, 2018

盧達生、汪羿齊、曾懷寬 「具有多個控制閘極的快閃記憶體與快閃記憶體陣列裝置」中華民國發明專利 #I664715, Jul. 1, 2019.

D. D. Lu, Y.-C. Wang and H.-K. Zeng, “Flash memory with multiple control gates and flash memory array device made thereof,” US patent #10,622,451, Apr 14, 2020.

盧達生、林啟任，「多閘極鐵電記憶體電晶體以及記憶體陣列裝置」中華民國發明專利 #I760122, Apr. 1, 2022

Darsen Duane Lu and Chi-Jen Lin, “Ferroelectric Memory and Memory Array Device with Multiple Independently Controlled Gates,” US patent #11,785,778 B2, Oct. 10, 2023.